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Exciton Absorption in Compensated Germanium
Author(s) -
Safarov V. I.,
Shlimak I. S.,
Titkov A. N.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700410149
Subject(s) - germanium , exciton , impurity , absorption (acoustics) , absorption edge , ionization , ion , materials science , wavelength , atomic physics , molecular physics , chemistry , optoelectronics , condensed matter physics , physics , band gap , silicon , composite material , organic chemistry
The fine structure of the indirect absorption edge in highly compensated germanium has been investigated by the wavelength derivative technique. This technique offers significant advantages, the exciton knees in the indirect absorption being transformed into sharp peaks. With increasing impurity concentration in compensated samples the excitonic structure disappears. This phenomenon has been shown to be due to ionization of excitons in electric fields of randomly distributed impurity ions. The critical concentration found experimentally is 2 × 10 17 cm −3 , which agrees well with theoretical estimates.