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On the Faraday Effect of Hot Electrons in Many‐Valley Semiconductors
Author(s) -
Asche M.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700410107
Subject(s) - faraday effect , electron , semiconductor , physics , polarization (electrochemistry) , electric field , scattering , faraday rotator , condensed matter physics , faraday cage , atomic physics , electron scattering , faraday cup , magnetic field , optics , chemistry , beam (structure) , quantum mechanics , ion beam
For the calculation of the Faraday effect of hot electrons in many‐valley semiconductors the ellipsoidal form of the constant energy surfaces can be taken into account, if scattering between valleys on axes with different orientations to the applied fields is weak in comparison with other collision processes. In the case of small losses the rotation of the polarization plane and the ellipticity of radiation are discussed with respect to the electric de field as functions of mean carrier energies and electron redistribution among the valleys, considering interaction with acoustical and optical phonons as well as ionized impurities.