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Energy and Momentum Loss Rates for Hot Electrons in Silicon
Author(s) -
Ahmad S.,
Daga O. P.,
Khokle W. S.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700400222
Subject(s) - electron , phonon , silicon , physics , condensed matter physics , momentum (technical analysis) , electric field , atomic physics , nuclear physics , quantum mechanics , optoelectronics , finance , economics
Using of time‐dependent perturbation and deformation potential theories for electronphonon interaction, the rate of change of crystal momentum and energy of electron along the field direction has been estimated in silicon. It is found that the loss rate of crystal momentum of the electron along field direction, due to acoustic phonon collisions is greater than that due to optical phonon collisions, whereas the rate of loss of energy of electrons due to optical phonon interactions is greater than that due to acoustic phonon collisions. The dominant acoustic phonon contribution to the loss rate of the crystal momentum of the electron along field direction is confirmed by the observed and estimated temperature dependence of the drift velocity of electrons in silicon for high electric fields.