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The Electrical Properties of Silicon with Sodium Donors
Author(s) -
Doubrava P.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700400205
Subject(s) - electrical resistivity and conductivity , silicon , hall effect , scattering , thermal conduction , electron , condensed matter physics , sodium , materials science , temperature coefficient , physics , optics , composite material , optoelectronics , metallurgy , nuclear physics , quantum mechanics
The microphysical parameters of sodium donors in silicon are obtained from an investigation of the temperature dependence of the resistivity and the Hall coefficient and the scattering mechanism of the conduction electrons is determined. The unusual behaviour of the resistivity and the Hall coefficient in the low temperature region is discussed.