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On the Theory of the Low‐Temperature Galvanomagnetic Effects in Semiconductors in Strong Electric Fields
Author(s) -
Kachlishvili Z. S.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700400204
Subject(s) - electric field , physics , condensed matter physics , magnetic field , kinetic energy , boltzmann equation , phonon , scalar (mathematics) , quantum electrodynamics , momentum (technical analysis) , semiconductor , boltzmann constant , classical mechanics , quantum mechanics , mathematics , geometry , finance , economics
Galvanomagnetic effects have been studied by using the Boltzmann kinetic equation, when the energy of hot carriers is scattered on acoustic phonons and the momentum on statical defects. Calculations are carried out for any angle between the directions of the electric and magnetic field in the approximation of a parabolic law of dispersion and a scalar effective mass. General expressions of the galvanomagnetic characteristics were obtained both under specified current conditions and under specified electric field conditions.