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Absorption of Ultrasound in Intrinsic Ge, GaSb, and InSb
Author(s) -
Groubert E.,
Joullie A. M.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700390202
Subject(s) - attenuation coefficient , attenuation , ultrasonic attenuation , absorption (acoustics) , ultrasound , materials science , monocrystalline silicon , ultrasonic sensor , pulse (music) , acoustic attenuation , physics , optics , acoustics , optoelectronics , silicon , detector
An investigation is made of the change of the attenuation coefficient of ultrasonic longitudinal waves with frequencies of 10 to 300 MHz, propagating in monocrystalline Ge. GaSb, and InSb at temperatures of 300 and 77 °K. The measurements were made using the pulse‐echo technique. The results have been treated by the Sylwestrowicz method and fitted with the theories of absorption of sound by Woodruff‐Ehrenreich and Mason‐Bateman.