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Some Features of ESR and Spin–Lattice Relaxation of Electrons in Ge and InSb with Different Donor Concentrations
Author(s) -
Gershenzon E. M.,
Pevin N. M.,
Fogelson M. S.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700380238
Subject(s) - condensed matter physics , laser linewidth , electron , spin–lattice relaxation , relaxation (psychology) , conduction band , lattice (music) , electron paramagnetic resonance , atmospheric temperature range , chemistry , materials science , nuclear magnetic resonance , physics , paramagnetism , optics , thermodynamics , medicine , laser , quantum mechanics , acoustics
The concentration and temperature dependence of the ESR linewidth in n‐Ge and n‐InSb and spin–lattice relaxation times in Ge: As have been investigated in the X‐band. ESR line narrowing and the increase of the spin‐lattice relaxation rate with concentration in the low concentration range are explained by overlap of the donor electron wave functions. In the high concentration range the ESR data are compared with the theories of the spin relaxation of conduction electrons.