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Resistivity Change of Point Defects during Work Hardening of High‐Purity Copper
Author(s) -
Thom F.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700380149
Subject(s) - electrical resistivity and conductivity , copper , annealing (glass) , hardening (computing) , materials science , condensed matter physics , work hardening , physics , analytical chemistry (journal) , composite material , chemistry , metallurgy , quantum mechanics , chromatography , microstructure , layer (electronics)
The electrical resistivity of high‐purity copper deformed by torsion is examined after deformation and after annealing out of the point defects. Deformation is carried out at 4.2, 20.4, and 90.2 °K, and the increase of resistivity is recorded at 20.4 and 90.2 °K for a number of samples. Measuring temperatures near 80 °K prove to be unreliable for the observation of lattice defects. In accordance with Saada's theory the point defect concentration is found to rise proportional to \documentclass{article}\pagestyle{empty}\begin{document}$ \begin{array}{*{20}c} {\gamma _2 } \\ \int \\ {\gamma _1 } \\ \end{array}\tau (\gamma) $\end{document} at temperatures ≦ 20.4 °K if the measurements, too, are made at such temperatures. If, however, similar measurements are made after deformation at 90.2 °K the data obtained differ markedly from the Saada relation.