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Stationary State of Non‐Equilibrium Plasmas in Semiconductors with Finite Cross‐Section
Author(s) -
Holter Ø.,
Johnson R. R.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700380145
Subject(s) - plasma , ionization , semiconductor , conductivity , atomic physics , current density , impact ionization , cross section (physics) , limit (mathematics) , physics , differential equation , condensed matter physics , chemistry , mathematical analysis , mathematics , quantum mechanics , ion
Non‐equilibrium plasmas created by impact ionization in semiconductors are investigated. With constant axial current densities it is shown that the plasma is homogeneous in the axial direction. Expression for the radial density profiles are given in the limit of low and high plasma density. The numerical solution yields the impact ionization coefficient as a function of the total density. This relation is interpreted as a qualitative current‐voltage characteristic. With material specifications appropriate for InSb a region of negative differential conductivity is found for p‐InSb, but not for n‐InSb. The location of the turning point, corresponding to an infinite differential conductivity, is compared with Ancker‐Johnson's experimental results in p‐InSb.