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Conductivity of Hot Holes in Silicon at 77 °K
Author(s) -
Asche M.,
von Borzeszkowski J.,
Sarbei O. G.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700380135
Subject(s) - condensed matter physics , materials science , electric field , conductivity , phonon , silicon , electrical resistivity and conductivity , lattice (music) , electron mobility , field (mathematics) , chemistry , physics , optoelectronics , mathematics , quantum mechanics , acoustics , pure mathematics
The conductivity of holes in p‐Si is measured as a function of electric field strength in the 〈100〉, 〈110〉, and 〈111〉 directions of crystals with different resistivities (6000 Ω cm ≧ ≧ Q 300 °K ≧ 0.45 Ω cm) at 77 °K. The values obtained for samples from highly purified crystals are compared with the heavy hole mobility calculated theoretically within the framework of the same model which allowed to explain the dependence of mobility on lattice temperature. The different influence of the interaction with optical phonons on both the effects is caused by the non‐parabolic band structure, reflected more strongly by the field dependence of the mobility.