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Hole Effective Masses in Highly Doped CdSb Determined from Infrared‐Plasma‐Reflectivity Measurements
Author(s) -
Rheinländer B.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700380118
Subject(s) - relaxation (psychology) , anisotropy , reflectivity , doping , plasma , infrared , impurity , ionization , materials science , chemistry , atomic physics , optics , physics , ion , optoelectronics , psychology , social psychology , organic chemistry , quantum mechanics
Abstract The infrared plasma reflectivity is measured on heavily Ag‐doped CdSb with hole concentrations of p = (0.7 to 3.0) × 10 19 cm −3 in the spectral region λ = 3 to 30 μm at T = 85 and 300 °K. Conductivity effective masses and relaxation times of holes are determined from the plasma frequencies obtained by fitting experimental and theoretical reflectivity spectra. The masses are strongly anisotropic and weakly temperature dependent. The relaxation times for optical frequencies are slightly greater than those according to Hall mobilities. Scattering of holes on ionized impurities is concluded to be predominate in the relaxation mechanism.