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Acoustical Scattering in Polar Semiconductors at Strong Electric Fields
Author(s) -
Licea I.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700370230
Subject(s) - scattering , electron , semiconductor , momentum (technical analysis) , physics , polar , condensed matter physics , electric field , thermal conduction , dispersion (optics) , quantum electrodynamics , energy–momentum relation , electron scattering , quantum mechanics , finance , economics
The processes of acoustical scattering by a strong electric field in semiconductors with an arbitrary non‐parabolicity of the spherically symmetric conduction bands are considered in the electron temperature approximation. Assuming only acoustical scattering the energy and momentum conservation equations are established when both energy and momentum exchange is controlled by interelectronic collisions. Basing upon these results, the electron temperature and mobility in a polar semiconductor with a non‐parabolic energy dispersion law as that of n‐type InSb are studied theoretically. The problem is treated for “warm” and “hot” electrons and a comparison is made with the parabolic case.