Premium
Energy Band Structures of Four Polytypes of Silicon Carbide Calculated with the Empirical Pseudopotential Method
Author(s) -
Junginger H.g.,
van Haeringen W.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700370222
Subject(s) - pseudopotential , silicon carbide , curse of dimensionality , silicon , electronic band structure , carbon fibers , materials science , energy (signal processing) , condensed matter physics , computational physics , atomic physics , molecular physics , chemistry , physics , quantum mechanics , mathematics , optoelectronics , metallurgy , statistics , composite number , composite material
The electronic band structures of four polytypes of silicon carbide (3C, 2H, 4H, 6H) are calculated with the aid of local atomic pseudopotentials for carbon and silicon. The same pseudopotentials are used in all four polytypes. A description is given of the basic assumptions in the empirical pseudopotential method. A computer program is used which is able for symmetric k ‐values to reduce the dimensionality of matrices. The calculated energy band structures are in satisfactory agreement with well‐established experimental data.