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On Sensitizing Recombination Centres in GaSe Single Crystals
Author(s) -
Abdullaev G. B.,
Kh. Alieva M.,
Belenkii G. L.,
Mamedova A. Z.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700370208
Subject(s) - recombination , photoconductivity , doping , atomic physics , materials science , electron , kinetic energy , crystallography , molecular physics , chemistry , optoelectronics , physics , biochemistry , quantum mechanics , gene
An investigation is made of the stationary photoconductivity and its kinetic, the thermally stimulated conductivity, and the mobility of current carriers of tin‐doped p‐GaSe single crystals. It is shown experimentally that the recombination in such crystals is controlled by two types of recombination centres: one of them being “slow” (r), another “fast” (s). The principal parameters of “slow” recombination centres (r), thermal ( E cr T= 0.58 eV) and optical ( E cr O= 0.78 eV) energetic depth from C‐band, electron ( S n r = 5 × 10 −14 cm 2 ) and hole ( S p r = 3 × 10 −20 cm 2 ) capture cross‐sections, are measured. The concentration is found to be equal to N r = 3 × 10 14 cm −3 . It is shown that the r‐centre is a single charged donor which may be due to substituting Ga atoms by Sn atoms in the GaSe lattice.