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Second Harmonic Generation in Anisotropic Semiconductors Using DC Electric Fields
Author(s) -
Sodha M. S.,
Gupta B. M.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700370135
Subject(s) - anisotropy , electric field , physics , harmonic , microwave , scattering , semiconductor , second harmonic generation , condensed matter physics , phonon , field (mathematics) , polar , high harmonic generation , optics , computational physics , optoelectronics , acoustics , quantum mechanics , laser , mathematics , pure mathematics
An analytical investigation is made of the use of dc electric fields of arbitrary strength for the generation of second harmonic of high frequency electromagnetic waves in anisotropic semiconductors. The acoustical phonon, non‐polar optical phonon, and intervalley scattering are assumed to be the dominant type of scattering. It is seen that for the frequency of wave much greater than the effective collision frequency (i.e. the IR region), the generated second harmonic is proportional to the applied dc field. This is in contrast to the case of microwave frequencies where the generation is most efficient at some optimum dc field. The calculations of the anisotropy and the magnitude of the second harmonic generated are reported for [100], [110], and [111] directions of the combined wave and dc field for the case of n‐Ge.