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Transverse Magnetoresistance in Plastically Deformed n‐Type Germanium
Author(s) -
Balázs J.,
Pödör B.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700370115
Subject(s) - magnetoresistance , condensed matter physics , germanium , scattering , bent molecular geometry , materials science , transverse plane , anisotropy , electron , thermal conduction , magnetic field , physics , optics , composite material , optoelectronics , silicon , structural engineering , quantum mechanics , engineering
The transverse magnetoresistance in plastically bent n‐type Ge has been measured at 77 °K. In the bent samples the magnetoresistance coefficients were strongly increased and at the same time the mobility was reduced. This effect is caused by the scattering of electrons on dislocations. A theoretical model is presented for evaluating the magneto‐resistance coefficients, taking into account anisotropic scattering caused by the dislocations, and the conduction band structure of Ge. The theoretical results agree well with the experimental ones.