The Dependence of Cd Diffusion and Electrical Conductivity in CdS on Cd Partial Pressure and Temperature | Zendy

Shaw D. | Zendy; Whelan R. C. | Zendy

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The Dependence of Cd Diffusion and Electrical Conductivity in CdS on Cd Partial Pressure and Temperature

Author(s) -

Shaw D.,

Whelan R. C.

Publication year - 1969

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.19690360234

Subject(s) - diffusion , electrical resistivity and conductivity , conductivity , materials science , atmospheric temperature range , analytical chemistry (journal) , single crystal , chemistry , crystallography , thermodynamics , physics , chromatography , electrical engineering , engineering

The diffusion coefficient of Cd in undoped single crystal CdS has been measured at 850 °C as a function of Cd pressure, p Cd , by a radiotracer method. The electrical conductivity of similar CdS samples has also been measured as a function of p Cd in the temperature range 660 to 950 °C. It is concluded that the defects V″ Cd and Cd i xare responsible for Cd diffusion at 850 °C and that a satisfactory account of the results can be given in terms of Cd interstitials and vacancies plus a residual shallow foreign donor. A model for the defect structure in CdS at 850 °C is presented in terms of Cd vacancies and interstitials.

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