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Polishing Damage and Luminescence in p‐Type GaAs
Author(s) -
Tuck B.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690360129
Subject(s) - photoluminescence , polishing , dislocation , materials science , zinc , luminescence , doping , etching (microfabrication) , surface roughness , optoelectronics , analytical chemistry (journal) , composite material , metallurgy , chemistry , layer (electronics) , chromatography
Abstract The photoluminescence of zinc‐doped GaAs has been studied for different surface preparations. Mechanically polished specimens fluoresced less than chemically prepared ones. Etch‐pit studies using a dislocation etch indicated that mechanical polishing introduced dislocations and samples showing the largest number of etch pits showed the weakest photoluminescence. It was also shown that diffusing a large concentration of zinc into n‐type GaAs introduces dislocations, and it is suggested that this is the reason for the low photoluminescence efficiency of zinc‐doped GaAs for concentrations in excess of 10 19 cm −3 .