Premium
Shallow States in Semiconductors by Impurity Model Potential Method
Author(s) -
Jaroš M.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690360119
Subject(s) - impurity , semiconductor , silicon , range (aeronautics) , shallow donor , simple (philosophy) , ionization , ground state , atomic physics , potential method , ionization energy , condensed matter physics , computational physics , materials science , physics , quantum mechanics , ion , optoelectronics , mathematics , algorithm , philosophy , epistemology , composite material
Abstract A impurity model potential is constructed using the method of Heine et al. The treatment of the short‐range forces in this method is refined making the theory applicable to the impurity problem. It is shown how a simple spherical screened model potential can be used for the ground state calculation of shallow donors in semiconductors; the ionization energies of P, As, and Sb in silicon are given.