Dislocation Structure and Macroscopic Characteristics of Plastic Deformation at Creep of Silicon Crystals

It has been proved that the creep curve of silicon crystals under uniaxial compression at 2 to 15 kp/mm 2 and 900 to 1300 °C consists of five characteristic portions, each of them exhibiting a typical dislocation structure. The stationary stage is characterized by misoriented subgrains. The stationary creep rate at stresses up to 10 kp/mm 2 is governed by the kinetic equation\documentclass{article}\pagestyle{empty}\begin{document}$$ \dot \varepsilon = 10^{11} {\rm s}^{{\rm - 1}} \exp \left({ - \frac{{5.6\,{\rm eV - 2}{\rm .7} \times {\rm 10}^{{\rm - 21}} {\rm cm}^{\rm 3} \sigma }}{{kT}}} \right) $$\end{document}and controlled by barriers associated with dislocations in the subboundaries.