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Dislocation Structure and Macroscopic Characteristics of Plastic Deformation at Creep of Silicon Crystals
Author(s) -
Myshlyaev M. M.,
Nikitenko V. I.,
Nesterenko V. I.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690360108
Subject(s) - creep , materials science , dislocation , dislocation creep , silicon , composite material , deformation (meteorology) , compression (physics) , crystallography , condensed matter physics , metallurgy , physics , chemistry
It has been proved that the creep curve of silicon crystals under uniaxial compression at 2 to 15 kp/mm 2 and 900 to 1300 °C consists of five characteristic portions, each of them exhibiting a typical dislocation structure. The stationary stage is characterized by misoriented subgrains. The stationary creep rate at stresses up to 10 kp/mm 2 is governed by the kinetic equation\documentclass{article}\pagestyle{empty}\begin{document}$$ \dot \varepsilon = 10^{11} {\rm s}^{{\rm - 1}} \exp \left({ - \frac{{5.6\,{\rm eV - 2}{\rm .7} \times {\rm 10}^{{\rm - 21}} {\rm cm}^{\rm 3} \sigma }}{{kT}}} \right) $$\end{document}and controlled by barriers associated with dislocations in the subboundaries.