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Frenkel's Mechanism of Thermoelectronic Ionization in Single Crystals of Gallium Selenide
Author(s) -
Tagiev B. G.,
Guseinova E. S.,
Gadzhiev V. A.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690360106
Subject(s) - ionization , sigma , selenide , electric field , physics , atomic physics , gallium , dielectric , condensed matter physics , charge (physics) , field (mathematics) , analytical chemistry (journal) , chemistry , ion , quantum mechanics , mathematics , selenium , organic chemistry , chromatography , pure mathematics
Abstract Measurements are made of the current‐voltage characteristics of monocrystalline GaSe specimens within the strong field region of up to 4 × 10 4 V/cm in the temperature range from 300 to 125 °K. The data obtained are discussed in terms of Frenkel's mechanism of thermoelectronic ionization \documentclass{article}\pagestyle{empty}\begin{document}$(\sigma = \sigma _0 {\rm e}^{\beta \sqrt E })$\end{document} . The low field value for the activation energy of carriers, is found to be Δ E 0 = 0.18 eV, and decreases with increasing electric field according to the formula Δ E = Δ E 0 −2 \documentclass{article}\pagestyle{empty}\begin{document}$ e\sqrt {e\,E/\varepsilon} $\end{document} ab ( e electronic charge, E electric field intensity, ϵ high‐frequency dielectric constant). Correlating the experimental data with Frenkel's theory, values of ϵ = 8 are obtained for gallium selenide.