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The Shape Parameter of Donor Band Tails in Gallium Arsenide
Author(s) -
Wittmann H. R.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690350237
Subject(s) - gallium arsenide , electroluminescence , materials science , doping , absorption (acoustics) , gallium , condensed matter physics , optoelectronics , physics , nanotechnology , layer (electronics) , metallurgy , composite material
The shape parameter of the donor band tail in heavily n‐doped GaAs and in GaAs p‐n junctions has been obtained from absorption and electroluminescence measurements. The experimentally determined dependence of the shape parameter on donor concentration follows a power law as predicted by Kane.