Transport Phenomena in Degenerate Simple Model Semiconductor at High Electric Fields | Zendy

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Transport Phenomena in Degenerate Simple Model Semiconductor at High Electric Fields

Author(s) -

Kamal J.

Publication year - 1969

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.19690350230

Subject(s) - degenerate energy levels , electric field , semiconductor , condensed matter physics , simple (philosophy) , physics , impurity , field (mathematics) , function (biology) , magnetic field , distribution function , materials science , thermodynamics , quantum mechanics , mathematics , philosophy , epistemology , evolutionary biology , pure mathematics , biology

Expressions are derived for some transport coefficients in a simple model degenerate semiconductor in the presence of a strong d.c. electric field and a weak magnetic field using a distribution function of carrier velocities corresponding to an elevated carrier temperature. T e has been calculated following Shockley's treatment. The variation of these transport coefficients with electric field strength, the impurity parameter \documentclass{article}\pagestyle{empty}\begin{document}$ \sqrt {b/a} $\end{document} , and the chemical potential η has been studied. The results are presented in the form of graphs.

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