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Potential Fields of Parallel Edge Dislocation Arrays
Author(s) -
Neubert D.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690350227
Subject(s) - dislocation , equipotential , peierls stress , enhanced data rates for gsm evolution , dislocation creep , stress field , materials science , condensed matter physics , geometry , physics , mathematics , computer science , telecommunications , quantum mechanics , finite element method , thermodynamics
The equipotential lines for a free test dislocation in the stress field of fixed parallel edge dislocation arrays are calculated from linear elasticity theory. The potential fields determine the path a free dislocation will take under ideal conditions. The well known fact is demonstrated that from an energetic point of view edge dislocations prefer to arrange in a wall rather than in a glide plane, namely by the positions of the calculated potential valleys which give the stable positions for the free test dislocation. Calculations are presented for characteristic arrays with a small number of dislocations. As the qualitative features of the results will hold also for arrays with a large number of dislocations some conclusions are drawn on the process of polygonization and a comparison with properties of edge dislocation arrays in silicon is made.