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The Preparation of Graded‐Band‐Gap Single Crystals of II–VI Compounds
Author(s) -
Reimers P.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690350220
Subject(s) - band gap , materials science , absorption edge , crystallography , crystal (programming language) , single crystal , analytical chemistry (journal) , absorption (acoustics) , excitation , chemistry , optoelectronics , physics , chromatography , quantum mechanics , computer science , composite material , programming language
Graded‐band‐gap single crystals of Zn x Cd 1−x Se, CdS 1−x Se x , CdSe 1−x S x , Zn 1−x Cd x S, and Zn x Cd 1−x S y Se 1−y with x and y increasing along the direction of growth have been prepared by two different vapor phase methods. Typical crystal dimensions in the systems CdS 1−x Se x and CdSe 1−x S x are 6 × 7 × 20 mm 3 , in the other systems 2 × 3 × 8 mm 3 . The gradient of the band gap in the system CdS 1−x Se x could be varied between 0.1 and 2.0 eV/cm. The change in band gap vs. crystal position was determined by absorption measurements. All crystals show edge emission at liquid air temperature under excitation by uv light.