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Conduction in Strongly Compensated p‐Type GaSb
Author(s) -
D'olne Campos M.,
Gouskov L.,
van Mau A. Nguyen
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690350212
Subject(s) - condensed matter physics , thermal conduction , hall effect , conduction band , atmospheric temperature range , impurity , electrical resistivity and conductivity , valence band , materials science , valence (chemistry) , chemistry , physics , electron , band gap , thermodynamics , quantum mechanics , organic chemistry , composite material
Hall coefficient and resistivity of strongly compensated p‐type GaSb are measured between 10 and 300 °K. The results are interpreted in the high temperature range by free hole transport in the valence band. In the low temperature range hopping charge transfer between impurity centres is supposed to account for conduction.