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Conducting and Insulating Incorporation of Antimony into the BaTiO 3 Lattice
Author(s) -
Schmelz H.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690350121
Subject(s) - antimony , materials science , diffraction , microprobe , lattice (music) , neutron diffraction , doping , conductivity , trapping , electrical resistivity and conductivity , condensed matter physics , crystallography , analytical chemistry (journal) , crystal structure , mineralogy , chemistry , optics , metallurgy , optoelectronics , physics , ecology , chromatography , quantum mechanics , acoustics , biology
Sb‐doped BaTiO 3 is semiconducting only within a relative narrow concentration range. An explanation of this fact requires the knowledge of the lattice site occupied by the Sb. By means of X‐ray diffraction, neutron diffraction, and microprobe analysis it could be shown that Sb concentrations up to 10 at% are completely incorporated on Ti sites if an equivalent amount of Ti vacancies is offered, whereas the Sb substitutes Ba sites only partly even in the presence of an excess of TiO 2 . The Sb can cause conductivity in BaTiO 3 only if it is incorporated on Ba sites. For this purpose a high excess of TiO 2 is required. The transition from conducting to insulating incorporation is explained by a trapping mechanism caused by coupling of Sb with Ba vacancies taking into account the influence of the barrier layers.