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Preparation and Some Physical Properties of ZnGeP 2
Author(s) -
Ray B.,
Payne A. J.,
Burrell G. J.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690350118
Subject(s) - materials science , acceptor , melting point , chalcopyrite , band gap , analytical chemistry (journal) , electron mobility , absorption (acoustics) , crystallography , optoelectronics , chemistry , metallurgy , copper , condensed matter physics , physics , chromatography , composite material
Single crystal ZnGeP 2 has been prepared by slow cooling from the melt and by vapour transport of the constituent elements in a phosphorus atmosphere. X‐ray powder studies lead to a c/a ratio for the chalcopyrite‐structured ZnGeP 2 of 1.961. Thermal analysis measurements give a phase change at (952 ± 2) °C, probably disordering of chalcopyrite to zinc blende, and congruent melting at 1025 °C. Resistance‐temperature investigations suggest that acceptor levels at 0.10 and 0.62 eV control the free carrier concentration above and below room temperature, respectively. Undoped ZnGeP 2 is always p‐type. Minority carrier studies point to an electron mobility between 10 3 and 10 4 cm 2 /Vs. Photoconductivity and optical absorption measurements lead to the conclusion that the direct energy gap in ZnGeP 2 is 2.25 eV.