Preparation and Some Physical Properties of ZnGeP 2 | Zendy

Ray B. | Zendy; Payne A. J. | Zendy; Burrell G. J. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Preparation and Some Physical Properties of ZnGeP 2

Author(s) -

Ray B.,

Payne A. J.,

Burrell G. J.

Publication year - 1969

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.19690350118

Subject(s) - materials science , acceptor , melting point , chalcopyrite , band gap , analytical chemistry (journal) , electron mobility , absorption (acoustics) , crystallography , optoelectronics , chemistry , metallurgy , copper , condensed matter physics , physics , chromatography , composite material

Single crystal ZnGeP 2 has been prepared by slow cooling from the melt and by vapour transport of the constituent elements in a phosphorus atmosphere. X‐ray powder studies lead to a c/a ratio for the chalcopyrite‐structured ZnGeP 2 of 1.961. Thermal analysis measurements give a phase change at (952 ± 2) °C, probably disordering of chalcopyrite to zinc blende, and congruent melting at 1025 °C. Resistance‐temperature investigations suggest that acceptor levels at 0.10 and 0.62 eV control the free carrier concentration above and below room temperature, respectively. Undoped ZnGeP 2 is always p‐type. Minority carrier studies point to an electron mobility between 10 3 and 10 4 cm 2 /Vs. Photoconductivity and optical absorption measurements lead to the conclusion that the direct energy gap in ZnGeP 2 is 2.25 eV.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research