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The Exciton Binding Energy of III–V Semiconductor Compounds
Author(s) -
Kübler J. K.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690350117
Subject(s) - exciton , dielectric , semiconductor , binding energy , condensed matter physics , band gap , dielectric function , atomic physics , constant (computer programming) , biexciton , electron , chemistry , materials science , physics , quantum mechanics , optoelectronics , computer science , programming language
The experimental data on band structure parameters, external dielectric constants, and exciton binding energies of the III–V semiconductors have been correlated and the deviations of the experimental exciton binding energies from the values predicted by a hydrogenic formula involving the external dielectric constant have been explained. It is shown that the external dielectric constant must be multiplied by an enhancement factor to obtain the dielectric screening constant for the electron‐hole interaction if the energy gaps are small. This enhancement factor is explained theoretically and is obtained explicitely as a function of the gap from the experimental data for the III–V semiconductors.