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Reactions between Perfect Dislocations in Semiconductor Devices
Author(s) -
Sauvage M.,
Simon D.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690350115
Subject(s) - semiconductor , materials science , dislocation , condensed matter physics , silicon , slip (aerodynamics) , brittleness , lattice (music) , relaxation (psychology) , crystallography , composite material , optoelectronics , chemistry , physics , thermodynamics , acoustics , psychology , social psychology
Semiconductor devices of “thyristor structure” are studied by the X‐ray topographic method. Typical perfect dislocations are generated in n‐p junction and glide in neighbouring {111} slip planes close to the crystal surface, thus contributing to the relaxation of stresses located at the boundary between the two regions of different lattice parameters. — Dislocation reactions are observed and interpreted on the basis of a cross‐slip mechanism. The reaction product is an edge segment of sessile type increasing the brittleness of the silicon sample.