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Infrared Absorption in Gallium Phosphide
Author(s) -
Pikhtin A. N.,
Yaskov D. A.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690340244
Subject(s) - gallium phosphide , impurity , absorption (acoustics) , absorption spectroscopy , materials science , gallium , infrared spectroscopy , infrared , doping , indium phosphide , conduction band , spectral line , band gap , absorption band , extended x ray absorption fine structure , chemistry , gallium arsenide , optics , optoelectronics , physics , organic chemistry , quantum mechanics , astronomy , electron , metallurgy , composite material
An investigation was made on the infrared absorption spectra of gallium phosphide single crystals doped with different impurities in the temperature range from 90 to 420°K. With decreasing temperature a transformation of the absorption spectrum due to interband transitions between conduction band valleys to the absorption spectrum due to impurity states was observed. On the basis of a theoretical analysis of the results obtained, a number of parameters of the GaP band structure and impurity states characteristics have been determined.