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Superlinear Photoconductivity
Author(s) -
Stöckmann F.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690340238
Subject(s) - photoconductivity , photocurrent , recombination , excitation , recombination rate , conductor , electron , materials science , physics , condensed matter physics , optoelectronics , atomic physics , chemistry , quantum mechanics , biochemistry , composite material , gene
Using the method described in the preceding paper [1] general conditions are derived for the case that a photocurrent increases stronger than linear with the excitation strength G . If this so‐called superlinear photoconductivity is caused by a superlinear dependence of the majority carrier concentration on G , the necessary and sufficient conditions for an n‐type conductor are as follows: 1. With increasing G a group of imperfections whose concentration is sufficiently large and which were essentially unoccupied before, has to be fully occupied by electrons. 2. There must not simultaneously be a group of hole traps fully occupied by holes. 3. The rate determining slowest process in the recombination mechanism must be the capture of holes by the recombination centres.