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Experimental Evidence for the Validity of Lampert's Theory in the Negative Resistance Region of the GaSe(Sn)
Author(s) -
Romeo N.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690340234
Subject(s) - photoconductivity , valence (chemistry) , wavelength , materials science , valence band , condensed matter physics , voltage , analytical chemistry (journal) , atomic physics , band gap , chemistry , physics , optoelectronics , quantum mechanics , chromatography
Abstract GaSe(Sn) crystals having negative resistance also show a negative photoconductivity effect at voltages near the threshold value in a wavelength region between 1 and 2.3 μm. This effect is ascribed to a level located in the forbidden gap 0.5 to 0.55 eV above the valence band. This level is identified as that assumed by Lampert for explaining negative resistance in insulators in which double injection occurs.