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Investigations on Evaporated Films of Bismuth Oxide II. Determination of Type of Conductivity and Photoconductivity Measurements on Doped and Undoped Layers
Author(s) -
Gobrecht H.,
Seeck S.,
Bergt H. E.,
Märtens A.,
Kossmann K.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690340217
Subject(s) - photoconductivity , bismuth , conductivity , doping , photoelectric effect , materials science , analytical chemistry (journal) , oxide , electrical resistivity and conductivity , selenium , chemistry , optoelectronics , metallurgy , chromatography , electrical engineering , engineering
The type of conductivity of pure Bi 2 O 3 layers is determined by the change of conductivity under the influence of chemisorbed oxygen. The spectral photoconductive sensitivity is measured on undoped and doped Bi 2 O 3 layers within the range of 0.8 to 3.5 eV. The time constant of the photoelectric effect of pure Bi 2 O 3 layers can be reduced by photoadsorption of oxygen. A sulfur or selenium doping of the layers causes a shift of the wavelength limit towards the near infra‐red. The time constant is greatly reduced. The doped layers are suitable for vidicon use.

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