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Electrical Pinch in Intrinsic Elastically Bent Germanium
Author(s) -
Boiko I. I.,
Zhadko I. P.,
Romanov V. A.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690340205
Subject(s) - bent molecular geometry , condensed matter physics , joule heating , germanium , current (fluid) , asymmetry , crystal (programming language) , materials science , electrical resistivity and conductivity , joule effect , pinch , electric current , physics , optoelectronics , silicon , composite material , thermodynamics , quantum mechanics , computer science , programming language , nuclear physics
Theoretical and experimental investigations of the conductivity of elastically bent intrinsic Ge are performed. An high asymmetry of the current—voltage characteristic is predicted and observed in plates with a high velocity of surface recombination. It is connected with the deviation of the spatial distribution of carriers for two opposite directions of current, flowing through the crystal. It is shown that a negative differential resistance in thin crystals may arise at great electrical fields. Current oscillations connected with the Joule heating of the specimen are observed.