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GaAsGaP Heterojunctions
Author(s) -
Davis M. E.,
Zeidenbergs G.,
Anderson R. L.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690340139
Subject(s) - heterojunction , photocurrent , band gap , optoelectronics , materials science , conduction band , gap junction , classification of discontinuities , condensed matter physics , capacitance , modulation (music) , chemistry , physics , electron , electrode , mathematical analysis , biochemistry , mathematics , quantum mechanics , acoustics , intracellular
GaAsGaP n–n, n–p, and p–n heterojunctions were fabricated by growing GaAs onto GaP substrates using HCl as the transport agent in an open‐tube system. It is found that the conduction band is continuous at the interface. This is in contrast to reported discontinuities of 0.65 and 0.22 eV. A high concentration of interface states is present in such junctions as evidenced by the frequency dependence of capacitance, and the I – U characteristics. Photocurrent response is as expected in n(GaAs)–p(GaP) heterojunctions, but a modulation effect was observed in p(GaAs)–n(GaP) junctions. This effect is not well understood.