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Brillouin Scattering Studies of Acoustoelectric Domain Formation in Semiconducting CdS
Author(s) -
Wettling W.,
Bruun M.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690340121
Subject(s) - brillouin scattering , flux (metallurgy) , brillouin zone , electric field , scattering , exponential decay , physics , condensed matter physics , exponential growth , exponential function , intensity (physics) , optics , materials science , atomic physics , quantum mechanics , optical fiber , mathematics , metallurgy , mathematical analysis
The growth of the flux intensity in acoustoelectric domains in semiconducting CdS has been followed over five orders of magnitude for frequencies between 0.2 and 5 GHz using the Brillouin scattering technique. The form of the flux domains is exponential on both sides with a halfwidth of about 300 μm. By studying their formation in the very early stage before the current decay, it was found that the frequencies and amplification factors of the flux appearing first are close to those predicted by the linear theory. After the current has started to decay, higher and lower frequencies are observed, the lower with much higher amplification and intensities. It seems that the electric field inside the domain does not have an essential influence on the flux growth. The experimental results are compared with some acoustoelectric amplification models.