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X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion Implantation
Author(s) -
Bonse U.,
Hart M.,
Schwuttke G. H.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690330134
Subject(s) - ion , silicon , materials science , crystal (programming language) , transmission electron microscopy , lattice constant , lattice (music) , x ray , perfect crystal , crystallography , ion implantation , crystal structure , condensed matter physics , molecular physics , atomic physics , diffraction , optics , chemistry , physics , nanotechnology , optoelectronics , organic chemistry , computer science , acoustics , vacancy defect , programming language
X‐ray interference fringes observed in X‐ray topographs of silicon crystals bombarded with high energy ions (dose > 10 15 ions/cm 2 ) are described. The X‐ray fringes are used to analyze the deformation state of the crystal. It is shown that the bombarded crystal is a special kind of bicrystal composed of a thick perfect bulk crystal topped by a thin practically perfect layer crystal. Both crystals have the same crystallographic orientation and the same lattice constant but are separated by a small rigid body displacement. Contrast and geometry of the observed X‐ray patterns agree with the theoretical patterns calculated by Bonse and Hart [1] on the basis of a layer/bulk bicrystal model, and are also supported through transmission electron microscopy results. The ion range calculated from the interference fringes is in good agreement with the experimentally determined range.