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On the Mathematical Description of Electrical Processes in Semiconductors. II. Phase Space Analysis in Subspaces of Dimension Three
Author(s) -
Oberländer S.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690330126
Subject(s) - dimension (graph theory) , mathematics , linear subspace , mass action law , phase space , law of mass action , space (punctuation) , action (physics) , semiconductor , mathematical analysis , partial differential equation , physics , quantum mechanics , pure mathematics , computer science , thermodynamics , operating system
In Part I of this paper classes of systems of solutions without approximation, so‐called N ‐dimensional systems of solutions, have been given for N < 3 for the system of differential equations consisting of the continuity equations with a recombination law based upon the law of mass action, the common current equations, and Poisson's equation. In the present Part II systems of solutions for N = 3 are given. Applications to stationary problems of transport of non‐equilibrium carriers in semiconductors are discussed. Especially an interesting example with a non‐monotonous hole concentration in a semi‐infinite homogeneous semiconductor is treated. An approximation method for three‐dimensional systems of solutions is shown for the example of the so‐called anti‐neutrality approximation.