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Polarity Inversions of the Photo‐Hall E.M.F.
Author(s) -
Sakalas A.,
Viščakas J.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690330109
Subject(s) - polarity (international relations) , inversion (geology) , sign (mathematics) , semiconductor , hall effect , physics , condensed matter physics , optics , chemistry , geology , quantum mechanics , mathematics , mathematical analysis , magnetic field , paleontology , biochemistry , structural basin , cell
The inversion of the sign of the photo‐Hall voltage is investigated in almost intrinsic semiconductors being illuminated with light in the region of the fundamental absorption. It is shown theoretically that single or double inversions are possible if only one type of centres is considered. The inclusion of traps gives single, double or triple inversions. Numerical solutions of these cases are represented. The experimental data agree well with the theoretical curves.