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On the Mechanism of Charge Carrier Generation in Thin Layers of Molecular Associates
Author(s) -
Silinsh E. A.,
Taure L. F.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690320239
Subject(s) - ohmic contact , space charge , electric field , intermolecular force , ionization , materials science , charge (physics) , layer (electronics) , analytical chemistry (journal) , atomic physics , chemistry , ion , molecule , nanotechnology , physics , electron , organic chemistry , quantum mechanics , chromatography
Measurements are made of the dependence of the electrical current on voltage and sample thickness for thin layer systems of some molecular associates (MA) with intermolecular hydrogen bonds. The results show that the MA under investigation may be divided into two groups with respect to the mechanism of charge carrier generation in high electrical field (ϵ = 10 4 to 10 6 V/cm). For the first group of MA, the ohmic region of C—V characteristics is followed by a non‐linear injection region of space charge limited current (SCLC) type with a quasi‐continuous exponential trap distribution. At higher electrical fields (ϵ > 10 5 V/cm) the injection region passes to the dominating bulk ionization region. For the second group of MA the bulk ionization region follows directly after the ohmic region. The main experimental criteria of both mechanisms are discussed.