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Trapping Levels in the Silicon—Silicon Nitride System
Author(s) -
Kendall E. J. M.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690320229
Subject(s) - silicon nitride , trapping , silicon , materials science , nitride , optoelectronics , trap (plumbing) , thermal conduction , amorphous solid , crystalline silicon , conduction band , electron , nanotechnology , chemistry , crystallography , physics , layer (electronics) , composite material , ecology , quantum mechanics , meteorology , biology
The silicon—silicon nitride system has been examined using thermally stimulated current (TSC) techniques. The nitride was found to contain electron traps at between 0.50 and 0.90 eV below the bottom of the conduction band. A distribution of traps at or near the Si—Si 3 N 4 interface and about 0.10 eV below the conduction band of the silicon was found. The TSC spectra clearly showed the dependence of the trap occupancy and trap structure upon applied electric field and temperature. Electron microscope and X‐ray work indicated that the nitride layers were not truly amorphous but contained very small crystalline areas.