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Electron Population of Dislocation Levels in an Illuminated Covalent Semiconductor
Author(s) -
Fortini A.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690320138
Subject(s) - semiconductor , dangling bond , dislocation , germanium , doping , covalent bond , impurity , materials science , acceptor , condensed matter physics , electron , enhanced data rates for gsm evolution , conduction band , silicon , atomic physics , chemistry , physics , optoelectronics , telecommunications , organic chemistry , quantum mechanics , computer science
The occupation ratio of the acceptor levels associated with the dangling bonds of a dislocation in a covalent semiconductor submitted to optical electron‐hole generation is calculated thermodynamically. The same approach is also applied to the similar problem, first considered by Read, of an n‐doped semiconductor. Numerical calculations for germanium at different temperatures, assuming a dislocation level 0.2 eV below the conduction band edge, show that the occupation ratio increases as the temperature is decreased. At moderate temperatures, values as high as 0.1 can be reached by reasonable injection or impurity doping, the efficiency of both methods being roughly the same.