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Bulk Quantum Efficiency in Indium Antimonide
Author(s) -
la Guillaume C. Benott À,
Fishman G.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690320129
Subject(s) - indium antimonide , radiative transfer , quantum efficiency , auger , doping , indium , auger effect , trapping , antimonide , materials science , atomic physics , chemistry , optoelectronics , physics , condensed matter physics , optics , ecology , biology
The bulk quantum efficiency η of indium antimonide is studied between 4 and 300 °K with doping concentrations ranging from 2 × 10 14 to 2 × 10 18 donors cm −3 . Using the formula η = τ N /(τ N + τ R ) (where τ R is the radiative lifetime and τ N the non‐radiative one), it is possible to deduce from the experimental results the importance of different non‐radiative processes since τ R is relatively well‐known. It is shown that the Auger effect is predominant with regard to the recombination through the mechanism of trapping (Shockley‐Read process) at high temperatures or for high doping concentrations.