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Capacitance—Voltage Relations of Schottky and p—n Diodes in the Presence of both Shallow and Deep Impurities
Author(s) -
van Opdorp C.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690320110
Subject(s) - impurity , schottky diode , capacitance , materials science , shallow donor , schottky barrier , diode , doping , analytical chemistry (journal) , condensed matter physics , chemistry , electrode , optoelectronics , physics , chromatography , organic chemistry
If at the lightly doped side of an abrupt junction both shallow and deep impurities of the same kind are present, the slope of a low‐frequency C −2 vs. V plot is proportional to the total concentration of these impurities. The value of the voltage V e as found by extrapolating C −2 to zero depends on the individual concentrations and depths of the two kinds of impurities. A simple expression for V e is derived. The same is done for a diffused graded junction with both shallow and deep impurities in the starting material. If the depths of the impurities are known, the two concentrations can be found separately.