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Recombination Radiation Spectra in ZnSiP 2 Crystals
Author(s) -
Alekperova E. E.,
Valov Yu. A.,
Goryunova N. A.,
Ryvkin S. M.,
Shpenkov G. P.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690320106
Subject(s) - recombination , radiation , spectral line , impurity , atomic physics , excited state , semiconductor , luminescence , electron , materials science , physics , chemistry , optics , optoelectronics , nuclear physics , biochemistry , quantum mechanics , astronomy , gene
The recombination radiation spectra of ZnSiP 2 single crystals produced by different methods and doped with different impurities have been measured. The recombination radiation was excited by a high‐energy electron beam. The recombination radiation spectra of ZnSiP 2 appeared to be similar to that of the wide forbidden band A 3 B 5 phosphides. The recombination takes place at levels located in the forbidden band of this semiconductor. The investigation of the recombination radiation spectra permits us to judge of luminescent properties of ZnSiP 2 crystals produced by different techniques and of their energetic spectrum. In some cases it gives a possibility to some extent to characterize the peculiarities of methods of production of this substance.