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On the Long Period Photoconductivity of Cu 2 O
Author(s) -
Surnev L.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690310215
Subject(s) - photoconductivity , conduction band , materials science , thermal conduction , period (music) , kinetics , analytical chemistry (journal) , optoelectronics , chemistry , electron , physics , composite material , chromatography , quantum mechanics , acoustics
The slow photoconductivity of Cu 2 O has been studied. The results obtained can be explained by assuming the existence of three types of traps. The first type contains the highest levels in the forbidden gap. They create the fast component (τ ≈ 10 −4 s) of the photoconductivity at room temperature. Levels lying 0.7 eV below the bottom of the conduction band correspond to the second type of traps. They cause a reversible slow component at temperatures below 130 °C. The traps associated with the deepest levels (1.35 eV) produce an irreversible slow component of the photoconductivity at temperatures below 120 °C. The close correlation between the photoconductivity components leads to the assumption that all three types of traps are concentrated on definite sites of the sample. For that reason, with the filling up of traps, barriers are formed in the vicinity of these sites. These barriers determine the kinetics and extent of filling of the traps.