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On the Spectra of Impurity Photoconductivity of n‐ and p‐Type Indium Antimonide at Low Temperatures
Author(s) -
Ismailov I. M.,
Nasledov D. N.,
Smetannikova Yu. S.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690310209
Subject(s) - photoconductivity , indium antimonide , impurity , photoexcitation , photocurrent , materials science , condensed matter physics , antimonide , electric field , electron , phonon , atomic physics , chemistry , optoelectronics , physics , organic chemistry , quantum mechanics , excited state
The spectra of impurity photoconductivity of n‐ and p‐type indium antimonide at 6, 40, and 80 °K are investigated. The oscillations observed in the impurity photoconductivity of p‐type samples at helium temperature result from the interaction of hot holes and longitudinal optical phonons. It is found that the photoexcitation of electrons from the deep donor level to the conduction band in high electric fields leads to oscillatory impurity photoconductivity with periods equal to the limiting energies of the longitudinal and transverse acoustic phonons; the photocurrent value and relative amplitude of the oscillations depend nonlinearly on the electric field. The field dependence of the electron lifetime is evaluated.