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Theory of Surface Elastic Wave Excitement in Semiconductors with Low Rate of Surface Recombination of Current Carriers
Author(s) -
Vagner I. D.,
Ioffe I. V.,
Shender E. F.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690310205
Subject(s) - semiconductor , instability , excitation , rayleigh wave , current (fluid) , condensed matter physics , physics , drift current , surface wave , drift velocity , surface (topology) , electric current , atomic physics , electric field , optics , mechanics , optoelectronics , quantum mechanics , thermodynamics , mathematics , geometry
Abstract The instability of quasi‐neutral waves in semiconductors with two types of current carriers in electric and magnetic fields at low surface recombination rate is studied theoretically. It is shown that this instability causes the excitation of Rayleigh waves even if the drift velocity is lower than the surface wave velocity.