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Majority Carrier Sweep‐out after Pulse Injection into Semiconductors
Author(s) -
Lemke H.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690310204
Subject(s) - trap (plumbing) , relaxation (psychology) , semiconductor , space charge , pulse (music) , population , materials science , dielectric , sweep frequency response analysis , electron , voltage , physics , optoelectronics , quantum mechanics , medicine , environmental health , meteorology
After the removal of majority injecting voltages on semiconductors with traps a sweep‐out of free carriers in the field of the trapped space charge occurs resulting in a subthermal population of the majority band. A simple model leads to a system of Abel type differential equations, a closed solution of which could not be found. A “quasi‐stationary” approximation adequate to the experimental conditions relates the prominent features as sweep‐out time, depleted concentration, and recovery time to physically significant parameters and gives evidence of two different mechanisms of recovery: at high temperatures (relative to the trap depth) a competition between sweep‐out and dielectric relaxation, at low temperatures competition between retrapping and sweep‐out.